Npn rf transistors toshiba semiconductor and storage. Features complementary to s9012 excellent hfe linearity emitter base collector s90 transistornpn to92 2. Transistor u tilization precautions when semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. P2n2222a amplifier transistors npn silicon features these are pb. Temperature storage temperature npn epitaxial silicon transistor. Bf422 high voltage transistors npn silicon features this is a pb. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. Specification mentioned in this publication are subject to change without notice. Please consult the most recently issued document before initiating or completing a design. The gain of the bc109 will be in the range from 200 to 800, bc109b ranges from 200 to 450. Transistor 2sc829 silicon npn epitaxial planer type for highfrequency amplification unit. Bc109c npn transistor complementary pnp, replacement, pinout.
C828 transistor datasheet npn toshiba, c828 transistor, 2sc828 datasheet, pdf, c828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference. The top countries of supplier is china, from which the percentage of c828 transistor supply is 100% respectively. This publication supersedes and replaces all information previously supplied. Npn datasheet, npn pdf, npn data sheet, npn manual, npn pdf, npn, datenblatt, electronics npn, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets. Elektronische bauelemente npn plastic encapsulated transistor 14feb2011 rev. A collectoremitter breakdown voltage v br ceo ic 10 ma, ib 0 160.
The datasheet shows the internals of the transistor, which looks like this a rough approximation using a typical npn r2 and r3 are internal to the transistor. Enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated. Current complementary silicon power transistors are for use as output devices in complementary general purpose amplifier applications. Free packages are available maximum ratings rating symbol value unit collector. About 40% of these are transistors, 51% are integrated circuits, and 4% are other electronic components. C945 is an npn silicon planar epitaxial transistor designed for audio frequency amplifier. Free devices maximum ratings ta 25c unless otherwise noted characteristic symbol value unit collector. In this case, this digital transistor is a ordinary npn transistor with base resistors. Bc109c npn transistor complementary pnp, replacement.
C828 npn silicon epitaxial planar transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic. Max unit collector cutoff current icbo vcb 150 v, ie 0. C828 datasheet, c828 pdf, c828 data sheet, c828 manual, c828 pdf, c828, datenblatt, electronics c828, alldatasheet, free, datasheet, datasheets, data sheet, datas. Here is an image showing the pin diagram of the this transistor. Collector output capacitance vcb 10v, ie 0, f 1mhz noise. Storage time v cc 30 vdc, ic 150 madc, ib1 ib2 15 madc ts. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications. Units icbo collector cutoff current v cb60v, ie0 0.
The 2sc1211 is manufactured in a plastic to92 case. C828a datasheet 2sc828a, npn transistor toshiba, 2sc828a datasheet, c828a pdf, c828a pinout, c828a manual, c828a schematic, c828a equivalent. Calculate the base current ib to switch a resistive load of 4ma of a bipolar npn transistor which having the current gain. Calculate the base current of a bipolar npn transistor having the bias voltage 10v and the input base resistance of 200k. Toshiba transistor silicon npn epitaxial type pct process 2sc2240 low noise audio amplifier applications the 2sc2240 is a transistor for low frequency and low noise applications.
On special request, these transistors can be manufactured in different pin configurations. Refer to mounting instructions for fpack envelopes. This device is designed to lower noise figure in the region of low signal source impedance, and. Elektronische bauelemente 2sc2235 npn silicon general purpose transistor. A wide variety of c828 transistor options are available to you, there are 62 suppliers who sells c828 transistor on, mainly located in asia. Specifications and information herein are subject to change without notice. Off time switching time equivalent test circuits scope rise time storage time ts vcc 3v, ic 10ma, ib1 ib2 1ma. Fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. Symbol parameter conditions value unit rth ja thermal resistance from junction to ambient note 1 500 kw. Toshiba transistor silicon npn epitaxial type pct process 2sc2383 color tv vertical deflection output applications color tv classb sound output applications high breakdown voltage. May 28, 2018 c828 transistor datasheet npn toshiba, c828 transistor, 2sc828 datasheet, pdf, c828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference.
Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. This explains your question with the qrs part of the hfe shown in your datasheet. Toshiba transistor silicon pnp epitaxial type pct process. Product is preselected in storage time group a and group b. Obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. The bc109c transistor might have a current gain anywhere between 420 and 800. Npn transistor circuit working, characteristics, applications. No identification needed full production this datasheet contains final specifications. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Npn silicon epitaxial planar transistor, c828 pdf view download semtech corporation, c828 1 page datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits. The datasheet is printed for reference information only. Npn transistor datasheet, npn transistor pdf, npn transistor data sheet, datasheet, data sheet, pdf, page 2 home all manufacturers by category part name, description or manufacturer contain.
R2 forms a voltage divider with r1 such that the voltage on pin 1 needs to be more than the roughly 700 mv be drop of the bare transistor for the transistor to turn on. B typical characteristic 1 0 0 s 100 125 temperature, tc. So your transistor will actually say something like, 2sc828aq, 2sc828ar or 2sc828as, being 3 variants of 2sc828a. Features complementary to 2sa965 maximum ratings t b a b 25. Specification mentioned in this publication are subject to change. R1 allows connecting pin 1 directly to a digital output. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Elektronische bauelemente npn plastic encapsulated.
These transistors are subdivided into three groups q, r and s according to their dc current gain. Npnnpn generalpurpose double transistor in a sot363 sc88 very. C828 npn silicon epitaxial planar transistor, pdf, pinout. High voltage fastswitching npn power transistor stmicroelectronics. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min typ max unit test condition collector to base breakdown voltage vbrcbo 80 v ic0. Ksc1815 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter value units vcbo collectorbase voltage 60 v vceo collectoremitter voltage 50 v vebo emitterbase voltage 5 v ic collector current 150 ma ib base. Npn general purpose transistors bcw60 series thermal characteristics note 1. Toshiba transistor silicon npn epitaxial type pct process. According to the datasheet, the typical values are 2v for on. Npn epitaxial planar silicon transistor high hfe, lowfrequency generalpurpose amplifier applications. The suffix your transistor has determines which hfe gain it will have, as concluded from the datasheet. The 2sc945 is designed for use in driver stage of af amplifier and low speed switching.
Specifications may change in any manner without notice. Storage temperature range symbol vcbo vceo vebo icm ic ptot tj ts value. Ledg 3e ree 1c 12 23nov06 npn plasticencapsulate transistors c1815. This catalog provides information as of july, 2008. C945 transistor npn feature z excellent h fe linearity z low noise z complementary to a733 maximum ratings t a25. Transistor for low frequency smallsignal amplification. Storage time vcc 30 vdc, ic 150 madc, ib1 ib2 15 madc figure 2 ts. Free device maximum ratings rating symbol value unit collector. May 26, 2016 c828a datasheet 2sc828a, npn transistor toshiba, 2sc828a datasheet, c828a pdf, c828a pinout, c828a manual, c828a schematic, c828a equivalent. Npn transistor datasheet, npn transistor pdf, npn transistor data sheet, datasheet, data sheet, pdf, page 2. Ksc815 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter value units vcbo collectorbase voltage 60 v vceo collectoremitter voltage 45 v vebo emitterbase voltage 5 v ic collector current 200 ma. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Applications general purpose switching and amplification inverter and interface circuits circuit driver. Elektronische bauelemente npn plastic encapsulated transistor.